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| PTB 20239 12 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 12 Watts, 26 Vdc Class AB Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCC = 26 V ICQ = 25 mA f = 1513 MHz 20 23 9 LO TC OD E Input Power (Watts) Package 20232 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4 2.0 33 0.189 -40 to +150 5.3 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20239 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) Conditions IB = 0 A, IC = 5 mA, RBE = 22 VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 -- Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 10 W, ICQ = 25 mA, f = 1513 MHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 25 mA, f = 1513 MHz) Collector Efficiency (VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA, f = 1513 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA, f = 1513 MHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8 12 40 -- Typ -- 13 -- -- Max -- -- -- 5:1 Units dB Watts % -- Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 11 80 70 Efficiency vs. Output Power Efficiency (%) 10 60 50 40 30 20 10 0 Gain (dB) 9 8 7 6 1465 VCC = 26 V ICQ = 25 mA POUT = 12 W 1475 1485 1495 1505 1515 VCC = 26 V ICQ = 25 mA f = 1513 MHz 2 4 6 8 10 12 14 Frequency (MHz) Output Power (Watts) 2 4/30/98 PTB 20239 Impedance Data (shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 12 W, ICQ = 25 mA Z Source Z Load Frequency MHz 1465 1490 1515 R 4.84 4.45 4.13 Z Source jX 4.15 5.33 6.39 R 7.52 7.16 6.89 Z Load jX 10.26 11.29 12.25 Z0 = 50 Typical Scattering Parameters (VCE = 26 V, IC = 0.250 A) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.914 0.920 0.930 0.930 0.924 0.916 0.909 0.901 0.895 0.882 0.867 0.844 0.818 0.785 0.756 0.744 0.768 0.823 0.888 0.941 0.974 0.992 S21 Ang -179 180 177 175 174 172 171 170 168 167 165 164 163 163 165 168 171 173 172 169 166 162 S12 Ang 103 99 85 77 69 62 56 49 42 35 28 19 9 -2 -16 -32 -51 -70 -88 -105 -121 -135 S22 Ang 34 40 51 56 58 59 59 58 57 56 54 51 48 45 42 42 48 61 72 75 75 72 Mag 6.76 5.58 3.28 2.46 2.02 1.75 1.56 1.43 1.35 1.30 1.28 1.28 1.30 1.32 1.34 1.33 1.26 1.13 0.951 0.766 0.601 0.467 Mag 0.018 0.019 0.025 0.031 0.037 0.044 0.051 0.057 0.064 0.070 0.076 0.082 0.086 0.087 0.084 0.077 0.071 0.072 0.086 0.108 0.131 0.153 Mag 0.597 0.591 0.581 0.581 0.578 0.580 0.580 0.570 0.566 0.561 0.564 0.569 0.584 0.614 0.672 0.755 0.852 0.932 0.980 0.995 0.987 0.972 Ang 172 173 176 177 179 180 179 180 -179 -177 -175 -173 -170 -167 -164 -164 -167 -171 -177 177 172 168 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20239 Uen Rev. A 09-28-98 3 |
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